HM3416E - N-Channel Enhancement Mode Power MOSFET

Features

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D AEZE-.
SOT-23(.

H&M Semiconductor

Datasheet Details

Part number	HM3416E
Manufacturer	H&M Semiconductor
File Size	259.16 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM3416E Datasheet
Additional preview pages of the HM3416E datasheet.

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Full PDF Text Transcription

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20V N-Channel Enhancement-Mode MOSFET 20V N MOS HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.5V, Ids @ 3.8 A = 28mΩ RDS(ON), Vgs @ 4.5V, Ids @ 4.2 A = 24mΩ ESD Protected：2000V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D AEZE-** SOT-23(PACKAGE) GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 1.00 0.10 0.40 0.85 REF. 1.30 0.20 1.

Published: Nov 27, 2018 |